Specifications
Bipolar Transistor
Transistor Polarity:N Channel
Collector Emitter Voltage, Vceo:100V
DC Current Gain Min (hfe):10
Collector Current:3A
Collector Current @ hfe:3µA
DC Current Gain Max (hfe):50
Leaded Process Compatible:Yes
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Specifications
Bipolar Transistor
Transistor Polarity:N Channel
Collector Emitter Voltage, Vceo:100V
DC Current Gain Min (hfe):10
Collector Current:3A
Collector Current @ hfe:3µA
DC Current Gain Max (hfe):50
Leaded Process Compatible:Yes
Specifications
Bipolar Transistor
Transistor Polarity:N Channel
Collector Emitter Voltage, Vceo:100V
DC Current Gain Min (hfe):10
Collector Current:3A
Collector Current @ hfe:3µA
DC Current Gain Max (hfe):50
Leaded Process Compatible:Yes
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